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2025	260	Y. Huang, W. B. Tang, X. Xu, S. C. Ding, X. H. Xu, G. L. Yuan, Structure, properties and applications of HfO2-based piezoelectric films[J]. Nanoscale, 2025.
	259	H. D. Wu, B. X Yan, G. Bai, W. B. Tang, G. D. Zhang, Y. C. Ding, X. B. Lu, Z. B. Yan, J. M. Liu, G. L. Yuan, High-temperature stability of Hf0.5Zr0.5O2-based ferroelectric memory devices,Acta Materialia[J]. 2025, 294, 121179.
	258	N. N. Liu, Y. Y. Liu, H. D. Wu, J. Q. Fang, W. B. Tang, X. B. Lu, Z. B. Yan, J. M. Liu, G. L. Yuan, Reliable high-temperature ferroelectric memories based on Hf0.5Zr0.5O2 film[J]. Ceramics International,2025, 0272–8842.
	257	J. Cui, Y. Q. Xu, L. H. Shen, S. C. Ding, T. Wei*, C. Gan, G. L. Yuan, D. L. Geng, J. M. Liu, L. W. Wu, Y. D. Han, Unlocking the key role of electric field stimulus in ferroelectric photochromic phosphor for partitioned optical storage and encrypted transmission[J]. Chemical Engineering Journal,2025,161568,1385-8947
	256	Y. Huang, X. F. Zhao,Y. C. Ding, Z. E. Zhao, G. L. Yuan, MAPbI3 piezoelectric semiconductor and its multifunctional light-force detector[J]. J. Mater. Chem. C, 2025,13, 8257-8264
	255	J. H. Chen, X. Su, T. Yuan, W. B. Tang, S. C. Ding, Y. Shi, F. M. Li, K. Chen, Y. Yu, H. C. Zhang, S. Y. Zhu, G. L. Yuan, J. Lu, Subsurface State Bilayer in Tetragonal Ferroelectric BaTiO3[J]. Adv. Mater. Interfaces 2025, 12, 2400949.
	254	G. Bai, Y. H. Chen, G. L. Yuan, C. F . Gao,Negative longitudinal piezoelectricity in epitaxial perovskite ferroelectric films[J]. Phys. Rev. B, 2025, 111, 064104.
	253	S. C. Ding, W. B. Tang,X. H. Xu, Y. P. Wang, Y. Huang, G. L. Yuan, PZT-PMN-based high-power piezoelectric ceramics with co-large d33, Qm and Tc parameters[J]. J Mater Sci: Mater Electron, 2025, 36, 7.